2SD2058 D2058 NPN Power Transistor TO-220F
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This is a high-power 2SD2058 (D2058) NPN bipolar junction transistor (BJT) housed in an insulated TO-220F full-plastic package. Rated for up to 60V and 3A, it is widely used for low-frequency power amplification, high-current switching, and voltage regulation circuits in audio amplifiers and industrial power supplies.
Product Overview
The 2SD2058 (D2058) NPN Bipolar Junction Silicon Power Transistor is an industry-standard discrete semiconductor component engineered for low-frequency power amplification, linear voltage regulation, and robust high-current switching applications. Manufactured inside an fully-insulated package, this transistor balances a reliable continuous current ceiling with a low saturation voltage profile. This design prevents thermal runaways during continuous, active-duty switching phases. [1, 2, 3, 4]
Insulated TO-220F Package Architecture
The defining structural feature of this transistor is its TO-220F full-plastic molding enclosure. Unlike standard metal-backed TO-220 packages where the internal collector tab is directly bonded to the exposed rear heat-sink plate, the TO-220F is completely encapsulated in an insulating epoxy resin sleeve. [1, 2]
- Isolated Mounting: This full-plastic barrier isolates the backing plate from live internal voltage potentials. It allows you to bolt the transistor directly onto a shared metal heat sink chassis without using separate mica or silicone thermal insulation pads. [1]
- Streamlined Manufacturing: Eliminating insulating mounting hardware prevents accidental short circuits to structural grounds and vastly simplifies PCB thermal layouts.
Technical Specifications & Electrical Boundaries
Absolute maximum parameters and operation boundaries recorded at a base ambient temperature ($T_a = 25^\circ\text{C}$): [5, 6]
| Parameter Feature | Rated Specification Value |
|---|---|
| Transistor Polarity Type | Silicon NPN Epitaxial Bipolar Junction (BJT) |
| Collector-Emitter Voltage ($V_{\text{CEO}}$) | 60 Volts Maximum (Open Base constraint) |
| Collector-Base Voltage ($V_{\text{CBO}}$) | 60 Volts Maximum (Open Emitter constraint) |
| Emitter-Base Voltage ($V_{\text{EBO}}$) | 7 Volts Maximum (Open Collector constraint) |
| Continuous Collector Current ($I_C$) | 3.0 Amperes Maximum (Continuous Load capacity) |
| Base Driving Current ($I_B$) | 0.5 Amperes Maximum |
| Max Power Dissipation ($P_C$) | 25 Watts (With adequate metal heat sinking, $T_C = 25^\circ\text{C}$) |
| Low Collector Saturation ($V_{\text{CE(sat)}}$) | Max 1.0 Volt (Tested at $I_C = 2\text{A}, I_B = 0.2\text{A}$) |
| DC Current Gain Rating ($h_{\text{FE}}$) | 60 Minimum up to 200 (Varies by Y / O / G sorting grade) |
Standard Pinout Mapping
When viewing the transistor from the front side (facing the printed text markings with the pins pointing downward): [4, 5]
- Pin 1 (Left Leg) – Base (B): The control gate terminal that receives base current triggers to regulate output conductivity.
- Pin 2 (Center Leg) – Collector (C): The primary power inlet line connected to the main positive rail or load loop.
- Pin 3 (Right Leg) – Emitter (E): The return outlet path through which combined base and collector current discharges. [4, 5]
Common Circuit Implementations
- Audio Power Amplifiers: Employed in the final output output push-pull amplification stages of home stereo systems, active subwoofers, and vehicular amplifiers. (It serves as an exact electrical complementary pair to the 2SB1366 PNP transistor). [2, 3, 4, 5]
- DC-DC Power Supplies: Functioning as a series-pass element inside linear voltage regulator units to control output consistency.
- High-Current Solenoid & Relay Drivers: Serving as an electronic switch to safely actuate mid-range mechanical relays, cooling fans, and large brushed motors using low-power microcontroller logic pins.
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